Silicon Test Die
Wire Bondable
 
3-Row Die   More Die   Flip Chips   Bumped Die   Embedded Die   Dummy Wafers   IGBT Wafers   More Products   Home
PDF Version

 
Silicon Test Die
Variety of Wire Bondable Patterns
 
Quick Guide:  Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  •   Package Selector

 
Silicon Die with Daisy Chain
Nbr
Pads		 Description Pad Size Size (mm) Die
Thickness		 Metalization
over SiO2		 Tray Qty Part Number Click Photo
to Enlarge
8 pairs Daisy Chain 60 x 160µm 1.0 x 1.0mm
 250µm  Al 1.0µm 100 TD8-1.0-DC
151008 (A2)
16 pairs Daisy Chain 60 x 160µm 2.5 x 2.5mm
 250µm  Al 1.0µm 100 TD16-2.5-DC
152516 (B2)
24 pairs Daisy Chain 60 x 360µm 4.0 x 4.0mm
 250µm  Al 1.0µm 64 TD24-4.0-DC
154024 (C3)

TD24~208
DWG 154000 ALL
46 pairs Daisy Chain 60 x 360µm 4.0 x 8.3mm
 250µm
~725µm 		 Al 1.0µm 64 TD46-4x8-BG725-DC
150046
52 pairs Daisy Chain 60 x 360µm 4.0 x 12.5mm
 250µm
~725µm 		 Al 1.0µm
 36 TD52-4x12-BG725-DC
150052
64 pairs Daisy Chain 60 x 360µm 8.3 x 8.3mm
 250µm
~725µm 		 Al 1.0µm 64 TD64-8-BG725-DC
150064
82 pairs Daisy Chain 60 x 360µm 8.3 x 12.5mm
 250µm
~725µm 		 Al 1.0µm 36 TD82-8x12-BG725-DC
150082
100 pairs Daisy Chain 60 x 360µm 12.5 x 12.5mm
 250µm
~725µm 		 Al 1.0µm 36 TD100-12-BG725-DC
150100
118 pairs Daisy Chain 60 x 360µm 12.5 x 16.5mm
 250µm
~725µm 		 Al 1.0µm 16 TD118-12x16-BG725-DC
150118
136 pairs Daisy Chain 60 x 360µm 16.5 x 16.5mm
 250µm
~725µm 		 Al 1.0µm 16 TD136-16-BG725-DC
150136
154 pairs Daisy Chain 60 x 360µm 16.5 x 20.7mm
 250µm
~725µm 		 Al 1.0µm 9 TD154-16x20-BG725-DC
150154
170 pairs Daisy Chain 60 x 360µm 16.5 x 25mm
 250µm
~725µm 		 Al 1.0µm 9 TD170-16x25-BG725-DC
150170
172 pairs Daisy Chain 60 x 360µm 20.7 x 20.7mm
 250µm
~725µm 		 Al 1.0µm 9 TD172-20-BG725-DC
150172
190 pairs Daisy Chain 60 x 360µm 20.7 x 25mm
 250µm
~725µm 		 Al 1.0µm 9 TD190-20x25-BG725-DC
150190
208 pairs Daisy Chain 60 x 360µm 25 x 25mm
 250µm
~725µm 		 Al 1.0µm 9 TD208-25-BG725-DC
150208
 
Silicon Die with Isolated Pads
Nbr
Pads		 Description Pad Size Size (mm) Die
Thickness		 Metalization
over SiO2		 Tray Qty Part Number Click Photo
to Enlarge
16 Isolated Pad 60µm SQ. 1.0 x1.0mm
 250µm  Al 1.0µm
Ti 300Å		 100 TD16-1.0-ISO
151016 (A1)
32 Isolated Pad 60µm SQ. 2.5 x 2.5mm
 250µm  Al 1.0µm
Ti 300Å		 100 TD32-2.5-ISO
152533 (B1)
48 Isolated Pad 60µm SQ. 4.0 x 4.0mm
 250µm  Al 1.0µm
Ti 300Å		 64 TD48-4.0-ISO
154048 (C1)
 
 
Silicon Die with Differential Pairs for RF/Microwave Parasitic Test
Nbr
Pads		 Description Pad Size Size (mm) Die
Thickness		 Metalization
over SiO2		 Tray Qty Part Number Click Photo
to Enlarge
2 Pads
With Ground		 Differential
Pair		 Pad 60 x 160µm
Ground Plane
1000µm SQ.		 1.0 x1.0mm
 250µm  Al 1.0µm
Ti 300Å		 100 TD2-1.0-DIF
151002 (A3)
2 Pads
With Ground		 Differential
Pair		 Pad 60 x 160µm
Ground Plane
2500µm SQ.		 2.5 x 2.5mm
 250µm  Al 1.0µm
Ti 300Å		 100 TD2-2.5-DIF
152502 (B3)
2 Pads
With Ground		 Differential
Pair		 Pad 60 x 160µm
Ground Plane
4000µm SQ.		 4.0 x 4.0mm
 250µm  Al 1.0µm
Ti 300Å		 64 TD2-4.0-DIF
151002 (A3)
 
 
Silicon Die with Full Metallization
Nbr
Pads		 Description Pad Size Size (mm) Die
Thickness		 Metalization
over SiO2		 Tray Qty Part Number Click Photo
to Enlarge
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
 250µm  Al 1.0µm
Ti 300Å		 100 TD1-1.0-BG250-W
151001 (A4)
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
 508µm  Al 1.0µm
Ti 300Å		 100~400 TD1-1.0-BG508-W
251001
1 Large Pad Fully Metallized 1500µm SQ. 1.5 x1.5mm
 508µm  Al 1.0µm
Ti 300Å		 100~169 TD1-1.5-BG508-W
251501
1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm
 508µm  Al 1.0µm
Ti 300Å		 100 TD1-2.0-BG508-W
152001
1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm
 250µm  Al 1.0µm
Ti 300Å		 100 TD1-2.5-BG250-W
152501 (B4)
1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm
 508µm  Al 1.0µm
Ti 300Å		 100 TD1-2.5-BG508-W
252501
1 Large Pad Fully Metallized 3000µm SQ. 3.0 x 3.0mm
 508µm  Al 1.0µm
Ti 300Å		 100 TD1-3.0-BG508-W
153001
1 Large Pad Fully Metallized 4000µm SQ. 4.0 x 4.0mm
 250µm  Al 1.0µm
Ti 300Å		 64 TD1-4.0-BG250-W
154001 (C4)
1 Large Pad Fully Metallized 4000µm SQ. 4.0 x 4.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 64 TD1-4.0-BG508-W
245001
1 Large Pad Fully Metallized 5000µm SQ. 5.0 x 5.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 144 TD1-5.0-BG508-P
105001
1 Large Pad Fully Metallized 6000µm SQ. 6.0 x 6.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 121 TD1-6.0-BG508-P
106001
1 Large Pad Fully Metallized 7000µm SQ. 7.0 x 7.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 81 TD1-7.0-BG508-P
107001
1 Large Pad Fully Metallized 8000µm SQ. 8.0 x 8.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 64 TD1-8.0-BG508-P
108001
1 Large Pad Fully Metallized 10000µm SQ. 10.0 x 10.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 49 TD1-10.0-BG508-P
109901
1 Large Pad Fully Metallized 12000µm SQ. 12.0 x 12.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 36 TD1-12.0-BG508-P
209201
1 Large Pad Fully Metallized 15000µm SQ. 15.0 x 15.0mm
 200~
725µm 		 Al 1.0µm
Ti 300Å		 25 TD1-15.0-BG508-P
209501
Back grind die thickness 200~725um.
Rectangular die available  • Custom pad sizes and geometries available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT8) • Tape and Reel (E) • JEDEC Tray (T)

Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi
Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr
 
 
Silicon Die with Pad Array
Nbr
Pads		 Description Pad Size Size (mm) Die
Thickness		 Metalization
over SiO2		 Tray Qty Part Number Click Photo
to Enlarge
36 Full Array 127µm SQ. 1.0 x1.0mm
 250~750µm Al 1.0µm 100 FA36-1.0-BG508-W
144 Full Array 127µm SQ. 2.1 x2.1mm
 250~750µm Al 1.0µm 100 FA144-2.1-BG508-W
196 Full Array 127µm SQ. 2.5 x2.5mm
 250~750µm Al 1.0µm 100 FA196-2.5-BG508-W
256 Full Array 127µm SQ. 2.8 x2.8mm
 250~750µm Al 1.0µm 100 FA256-2.5-BG508-W
400 Full Array 127µm SQ. 3.5 x3.5mm
 200~750µm Al 1.0µm 256 FA400-3.5-BG508-P
625 Full Array 127µm SQ. 4.4 x4.4mm
 250~750µm Al 1.0µm 196 FA625-4.4-BG508-P
1156 Full Array 127µm SQ. 6.0 x6.0mm
 250~750µm Al 1.0µm 121 FA1156-6.0-BG508-P
1600 Full Array 127µm SQ. 7.0 x7.0mm
 250~750µm Al 1.0µm 81 FA1600-7.0-BG508-P
2025 Full Array 127µm SQ. 8.0 x8.0mm
 250~750µm Al 1.0µm 64 FA2025-8.0-BG508-P
Back grind die thickness 250~725um.
Seed Layer Ti 300Å
Rectangular die available  • Custom pad sizes and geometries available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT8) • Tape and Reel (E) • JEDEC Tray (T)

Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi
Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr
 
 
Silicon Die with 3-Rows of Bonding Pads
Total I/O
Pads		 Perimeter
Rows		 Pad Size
µm		 Size (mm) Die
Thickness		 Metalization
over SiO2		 Tray Qty Part Number Click Photo
to Enlarge
380 3-Rows 50SQ,90SQ
175x55		 5x3.25mm
 300,500,750µm Al 1.0µm 144 TD380-5x3.2-BG300P
TD380-5x3.2-BG500P
TD380-5x3.2-BG750P
525 3-Rows 50SQ,90SQ
175x55		 5x6.5mm
 300,500,750µm Al 1.0µm 121 TD525-5x6.5-BG750P
670 3-Rows 50SQ,90SQ
175x55		 5x10mm
 300,500,750µm Al 1.0µm TBA TD670-5x10-BG750P
815 3-Rows 50SQ,90SQ
175x55		 5x13mm
 300,500,750µm Al 1.0µm TBA TD815-5x13-BG750P
960 3-Rows 50SQ,90SQ
175x55		 5x16mm
 300,500,750µm Al 1.0µm TBA TD960-5x16-BG750P
615 3-Rows 50SQ,90SQ
175x55		 10x3.25mm
 300,500,750µm Al 1.0µm TBA TD615-10x3.2-BG750P
760 3-Rows 50SQ,90SQ
175x55		 10x6.5mm
 300,500,750µm Al 1.0µm 49 TD760-10x6.5-BG750P
905 3-Rows 50SQ,90SQ
175x55		 10x9.75mm
 300,500,750µm Al 1.0µm 49 TD905-10x10-BG750P
1050 3-Rows 50SQ,90SQ
175x55		 10x13mm
 300,500,750µm Al 1.0µm 25 TD1050-10x13-BG750P
1195 3-Rows 50SQ,90SQ
175x55		 10x16mm
 300,500,750µm Al 1.0µm TBA TD1195-10x16-BG750P
1340 3-Rows 50SQ,90SQ
175x55		 10x19mm
 300,500,750µm Al 1.0µm TBA TD1340-10x19-BG750P
995 3-Rows 50SQ,90SQ
175x55		 15x6.5mm
 300,500,750µm Al 1.0µm TBA TD995-15x6.5-BG750P
1140 3-Rows 50SQ,90SQ
175x55		 15x9.75mm
 300,500,750µm Al 1.0µm 25 TD1140-15x10-BG750P
1285 3-Rows 50SQ,90SQ
175x55		 15x13mm
 300,500,750µm Al 1.0µm 25 TD1285-15x13-BG750P
1430 3-Rows 50SQ,90SQ
175x55		 15x16mm
 300,500,750µm Al 1.0µm 16 TD1430-15x16-BG750P
1575 3-Rows 50SQ,90SQ
175x55		 15x19mm
 300,500,750µm Al 1.0µm 16 TD1575-15x19-BG750P
1520 3-Rows 50SQ,90SQ
175x55		 20x13mm
 300,500,750µm Al 1.0µm 9 TD1520-20x13-BG750P
1665 3-Rows 50SQ,90SQ
175x55		 20x16mm
 300,500,750µm Al 1.0µm 9 TD1665-20x16-BG750P
1810 3-Rows 50SQ,90SQ
175x55		 20x19mm
 300,500,750µm Al 1.0µm 9 TD1810-20x19-BG750P
1950 3-Rows 50SQ,90SQ
175x55		 20x23mm
 300,500,750µm Al 1.0µm 9 TD1950-20x23-BG750P
1750 3-Rows 50SQ,90SQ
175x55		 25x13mm
 300,500,750µm Al 1.0µm TBA TD1750-25x13-BG750P
1900 3-Rows 50SQ,90SQ
175x55		 25x16mm
 300,500,750µm Al 1.0µm TBA TD1900-25x16-BG750P
2050 3-Rows 50SQ,90SQ
175x55		 25x19mm
 300,500,750µm Al 1.0µm TBA TD2050-25x19-BG750P
2200 3-Rows 50SQ,90SQ
175x55		 25x23mm
 300,500,750µm Al 1.0µm 9 TD2200-25x23-BG750P
2300 3-Rows 50SQ,90SQ
175x55		 25x26mm
 300,500,750µm Al 1.0µm 9 TD2300-25x26-BG750P
Back grind die thickness 250~750um.
Seed Layer Ti 300Å
Other Sizes available  • Custom pad sizes and geometries available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT12) • Tape and Reel (E) • JEDEC Tray (T)

Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi
Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr
 
 
JEDEC Moisture Sensitivity Level MSL-1
 
About Dielectric Materials:
Silicon-dioxide insulator SiO2 k = 4.2 • Application: Gold and aluminum wire bonding
Low-k Dielectric k < 3.0 • Application: Copper wire bonding and ultra-fine pitch pads < 90nm

Competing Low-k process technologies:
1) Chemical vapor deposited (CVD) inorganic films such as carbon-doped oxides (SiOC) k~2.8
2) Spun-on dielectrics (SOD) - polymer organic films k 2.5~2.8

Challenge of bonding to pads with Low-k dielectrics:
Spongy dielectric underlayer layer causes top metallization layer to cup and deflect, thus lowering optimal bondability.
Package Selector
Test Die Part Numbering System
TD 16 - 2.5 - DC - BG250 W
Die Type Nbr Pads   Die Size (mm)   Patterns   Backgrind
Option		 Packaging
Options
TD=Singulated Die

TDW = Sawn Wafer

TDWU = Unsawn Wafer

FA = Full Array
Single Die		 1=Fully Plated

2=Differential Pair

3~999=Bond Pads		   Square Example
1.0 = 1.0x1.0mm
2.5 = 2.5x2.5mm
4.0 = 4.0x4.0mm
Other sizes available


Rectangular Example:
5x3= X5mm x Y3mm
3x5= X3mm x Y5mm
Other sizes available		   DC = Daisy Chain

BUS = Fully Plated

ISO = Isolated Pads

DIF = Differential Pair

FA = Full Array

Blank = Isolated
or Fully Plated		   BG### = um thickness

Example:
BG250 = 250um = 10mils

Blank = Undefined		 Single Die:
W = 2" Waffle Pack
P = 4" Waffle Pack
T = JEDEC Tray
E = Tape & Reel

Unsawn Wafer:
C = Cassette
J = Jar/Canister

Sawn Wafer:
NT8 = Dicing Tape 8" Ring
NT12 = Dicing Tape 12" Ring
UV8 = UV Tape 8" Ring
UV12 = UV Tape 12" Ring
Aluminum Pads: 1st Layer: SiO2 - 3000Å   •   2nd Layer: Ti - 300Å thick   •   3rd Layer: Al - 1.0µm thick  •   ( 1.0µm = 10000Å = 10KÅ)
Copper and other pad platings available
 
 
Die Daisy Chain Numbering System
   1       5       10       08   
Variations Packaging Size I/O
1 = Standard

2~9 = Variations
Thickness
Plating
Materials
etc.		 Single Die:
0 = 4" Waffle Tray (P)
5 = 2" Waffle Tray (W)
2 = Tape & Reel (E)


Sawn Wafer Format:
3 = UV Tape & Ring ("U")
4 = Non-UV & Ring ("N")

Unsawn Wafer Format:
7 = Clam Shell, Jar, etc

To be Assigned:
1, 6, 8, 9		 10 = 1.0x1.0mm

25 = 2.5x2.5mm

40 = 4.0x4.0mm

Other Sizes Available		 01 = 1 pad

08 = 8 pads
16 = 16 pads
24 = 24 pads
48 = 48 pads
99 = 100 pads
 
 
 
        
 
Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  
 
More Products   Home  
 



TopLine Corporation
95 Highway 22 W
Milledgeville, GA 31061, USA
Toll Free USA/Canada (800) 776-9888
International: 1-478-451-5000  •  Fax: 1-478-451-3000
Email: sales@topline.tv

 ©2012 TopLine. All Rights Reserved.

Home